NVMFS5A160PLZWFT1G
MOSFET P-CH 60V 15A/100A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS5A160PLZWFT1G is a P-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified device features a 60 V drain-source voltage and a continuous drain current of 15 A at 25°C ambient, scaling to 100 A at 25°C case temperature. The low on-resistance of 7.7 mOhm at 50 A and 10 V gate drive makes it suitable for high-efficiency power switching. It offers a maximum power dissipation of 3.8 W (ambient) and 200 W (case). The MOSFET supports gate drive voltages from 4.5 V to 10 V with a maximum gate-source voltage of ±20 V. Key parameters include a maximum input capacitance (Ciss) of 7700 pF at 20 V and a gate charge (Qg) of 160 nC at 10 V. The component is housed in a 5x6 mm 8-SOFL package, supplied on tape and reel. This device is utilized in automotive power management and control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 20 V |
| Qualification | AEC-Q101 |
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