NVMFS5A160PLZT3G
MOSFET P-CH 60V 15A/100A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel Power MOSFET, NVMFS5A160PLZT3G, offers a 60V drain-source voltage rating. This device features a continuous drain current capability of 15A at ambient temperature and 100A at case temperature, with a maximum power dissipation of 3.8W (ambient) and 200W (case). The low on-resistance of 7.7mOhm at 50A and 10V gate-source voltage is achieved with a 10V gate drive. Key parameters include a gate charge of 160 nC at 10V and input capacitance of 7700 pF at 20V. Designed for surface mounting in an 8-PowerTDFN, 5-Lead package (5-DFN 5x6), this MOSFET operates across a temperature range of -55°C to 175°C. Qualified to AEC-Q101, it is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 20 V |
| Qualification | AEC-Q101 |