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NVMFS5A160PLZT1G

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NVMFS5A160PLZT1G

MOSFET P-CH 60V 15A/100A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5A160PLZT1G is a P-Channel Power MOSFET designed for automotive applications. This device features a 60V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 15A at 25°C ambient and 100A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 7.7mOhm at 50A and 10V gate-source voltage (Vgs). Maximum power dissipation is 3.8W (Ta) and 200W (Tc). It operates with drive voltages ranging from 4.5V to 10V and has a maximum gate charge (Qg) of 160 nC at 10V. The MOSFET is housed in an 8-PowerTDFN, 5-Lead package (5-DFN 5x6) for surface mounting and is qualified to AEC-Q101 standards. This component is suitable for demanding automotive power management solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs7.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7700 pF @ 20 V
QualificationAEC-Q101

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