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NVMFS5A140PLZWFT3G

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NVMFS5A140PLZWFT3G

MOSFET P-CH 40V 20A/140A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5A140PLZWFT3G is a P-Channel Power MOSFET designed for demanding automotive applications. This component features a 40V drain-source breakdown voltage, with a continuous drain current capability of 20A at a 25°C ambient temperature and 140A at a 25°C case temperature. It offers a low on-resistance of 4.2mOhm at 50A and 10V Vgs. The device is supplied in an 8-PowerTDFN, 5-lead package (5x6) and is qualified to AEC-Q101 standards. Key electrical characteristics include a maximum gate charge of 136 nC at 10V Vgs and input capacitance of 7400 pF at 20V Vds. Power dissipation is rated at 3.8W (Ta) and 200W (Tc). This MOSFET is suitable for high-power switching applications within the automotive sector.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 20 V
QualificationAEC-Q101

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