NVMFS5885NLWFT1G
MOSFET N-CH 60V 10.2A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVMFS5885NLWFT1G is an N-Channel MOSFET designed for high-performance applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current of 10.2A at 25°C ambient. Optimized for efficient power handling, it offers a maximum on-resistance (Rds On) of 15mOhm at 15A and 10V gate-source voltage. The device is housed in a compact 8-PowerTDFN, 5-Lead (5x6) package, suitable for surface mounting. With a junction temperature range of -55°C to 175°C, it is qualified to AEC-Q101 automotive standards, making it ideal for automotive power management and industrial control systems. The MOSFET exhibits a gate charge of 21nC at 10V and input capacitance of 1340pF at 25V. Power dissipation is rated at 3.7W (Ta) and 54W (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1340 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
