NVMFS5885NLT1G
MOSFET N-CH 60V 10.2A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS5885NLT1G is a 60V N-Channel Power MOSFET designed for demanding automotive applications. This device features a low Rds(on) of 15mOhm at 15A and 10V Vgs, ensuring efficient power transfer. With a continuous drain current capability of 10.2A (Ta) and a maximum power dissipation of 54W (Tc), it is suitable for power management circuits. The NVMFS5885NLT1G utilizes MOSFET technology and is housed in a compact 8-PowerTDFN, 5-lead package (5x6mm). Key electrical characteristics include a gate charge of 21 nC @ 10V and input capacitance of 1340 pF @ 25V. Qualified to AEC-Q101 standards, this component is ideal for use in automotive infotainment, body control modules, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 54W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1340 pF @ 25 V |
| Qualification | AEC-Q101 |