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NVMFS5834NLWFT3G

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NVMFS5834NLWFT3G

MOSFET N-CH 40V 14A/75A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number NVMFS5834NLWFT3G. This AEC-Q101 qualified device features a 40V drain-source voltage and offers continuous drain current of 14A at 25°C ambient and 75A at 25°C case temperature. With a maximum Rds(on) of 9.3mOhm at 20A and 10V Vgs, it supports drive voltages from 4.5V to 10V. The device boasts a maximum power dissipation of 3.6W (Ta) and 107W (Tc), with a junction temperature range of -55°C to 175°C. Key parameters include a maximum gate charge of 24 nC at 10V and input capacitance of 1231 pF at 20V. Packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) and supplied on tape and reel, this MOSFET is suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1231 pF @ 20 V
QualificationAEC-Q101

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