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NVMFS5834NLT3G

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NVMFS5834NLT3G

MOSFET N-CH 40V 14A/75A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5834NLT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 40V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 14A at ambient temperature (Ta) and 75A at case temperature (Tc). The device exhibits low on-resistance (Rds On) of 9.3mOhm at 20A and 10V Vgs, with a maximum gate charge (Qg) of 24nC at 10V Vgs. Input capacitance (Ciss) is specified at a maximum of 1231pF at 20V Vds. This MOSFET is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and supports surface mount installation. It is rated for a maximum power dissipation of 3.6W (Ta) and 107W (Tc). The NVMFS5834NLT3G operates across a temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive power management systems and other high-reliability applications. Drive voltage ranges from 4.5V to 10V, with a maximum Vgs of ±20V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1231 pF @ 20 V
QualificationAEC-Q101

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