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NVMFS5834NLT1G

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NVMFS5834NLT1G

MOSFET N-CH 40V 14A/75A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5834NLT1G is an N-Channel Power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 40V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 14A at ambient temperature (Ta), scaling to 75A at case temperature (Tc). With a low on-resistance (Rds On) of 9.3mOhm at 20A and 10V Vgs, it offers efficient power handling, dissipating up to 3.6W (Ta) and 107W (Tc). The device utilizes MOSFET technology and is supplied in an 8-PowerTDFN, 5-lead package (5x6 footprint) for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 24nC at 10V Vgs and input capacitance (Ciss) of 1231pF at 20V Vds. This component is suitable for automotive and industrial power management solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1231 pF @ 20 V
QualificationAEC-Q101

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