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NVMFS5833NT1G

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NVMFS5833NT1G

MOSFET N-CH 40V 16A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5833NT1G is a N-Channel MOSFET designed for demanding applications. This device features a 40V drain-source voltage rating and a continuous drain current capability of 16A at 25°C ambient. With a low Rds(on) of 7.5mOhm at 40A and 10V gate drive, it minimizes conduction losses. The MOSFET is housed in a compact 5-DFN (5x6) package with 8-SOFL pinout, suitable for surface mounting. It offers a maximum power dissipation of 3.7W (ambient) and 112W (case). The NVMFS5833NT1G is AEC-Q101 qualified, making it suitable for automotive applications. Key parameters include a gate charge of 32.5 nC at 10V and input capacitance of 1714 pF at 25V. Operating temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs7.5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1714 pF @ 25 V
QualificationAEC-Q101

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