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NVMFS5832NLWFT3G

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NVMFS5832NLWFT3G

MOSFET N-CH 40V 21A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel MOSFET, part number NVMFS5832NLWFT3G, is a 40V device designed for high-performance applications. This automotive-qualified component features a 21A continuous drain current (Ta) and a low on-resistance of 4.2mOhm at 20A and 10V Vgs. Its 3.7W power dissipation (Ta) and 127W (Tc) capability, coupled with a compact 5-DFN (5x6) (8-SOFL) package, make it suitable for demanding thermal environments. Key parameters include a gate charge of 51 nC (Max) at 10V Vgs and input capacitance of 2700 pF (Max) at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is ideal for automotive power management and switching solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
QualificationAEC-Q101

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