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NVMFS5832NLWFT1G

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NVMFS5832NLWFT1G

MOSFET N-CH 40V 21A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5832NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C, this component offers a low on-resistance (Rds On) of 4.2mOhm at 20A and 10V Vgs. The device is qualified to AEC-Q101 and suitable for automotive applications. Its 5-DFN (5x6) package with 8-SOFL leads provides efficient thermal management, with a maximum power dissipation of 3.7W (Ta) and 127W (Tc). Key parameters include a gate charge (Qg) of 51nC (max) at 10V Vgs and input capacitance (Ciss) of 2700pF (max) at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
QualificationAEC-Q101

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