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NVMFS5832NLT3G

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NVMFS5832NLT3G

MOSFET N-CH 40V 21A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5832NLT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Ta). With a low on-resistance of 4.2mOhm at 20A and 10V Vgs, it offers efficient power handling. The device is qualified to AEC-Q101 standards, ensuring reliability in harsh environments. It is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 2700 pF at 25V. Power dissipation is rated at 3.7W (Ta) and 127W (Tc). This MOSFET operates across a temperature range of -55°C to 175°C (TJ) and supports drive voltages from 4.5V to 10V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V
QualificationAEC-Q101

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