NVMFS5831NLWFT1G
T2 40V LL, SINGLE NCH, SO-8FL 2.Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5831NLWFT1G is a high-performance N-Channel Power MOSFET designed for demanding automotive applications. Featuring a 40 V drain-to-source voltage (Vdss) and a continuous drain current capability of 26 A at 25°C ambient and 161 A at 25°C case temperature, this device offers robust power handling. Its low on-resistance of 2.95 mOhm (max) at 20 A and 10 V gate drive voltage ensures minimal conduction losses. The MOSFET supports a gate drive range of 4.5 V to 10 V and has a maximum gate charge of 90 nC at 10 V.
Constructed with wettable flank technology for improved solder joint reliability, the NVMFS5831NLWFT1G is housed in a 5-DFNW (4.9x5.9) package, also known as 8-SOFL-WF, for efficient surface mounting. Its exceptional thermal performance is highlighted by a maximum power dissipation of 3.8 W (Ta) and 143 W (Tc). Qualified to AEC-Q101 standards, this MOSFET is suitable for applications in automotive power management, electric vehicle systems, and advanced driver-assistance systems (ADAS). The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 161A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.95mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4946 pF @ 25 V |
| Qualification | AEC-Q101 |
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