NVMFS5830NLWFT3G
MOSFET N-CH 40V 29A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5830NLWFT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 40 V drain-source voltage (Vdss) and a continuous drain current (Id) of 29 A at 25°C (Ta). With a low on-resistance (Rds On) of 2.3 mOhm at 20 A and 10 V Vgs, it offers efficient power handling. The device supports gate drive voltages from 4.5 V to 10 V and has a maximum gate-source voltage (Vgs) of ±20 V. Key electrical characteristics include a maximum input capacitance (Ciss) of 5880 pF at 25 V and a gate charge (Qg) of 113 nC at 10 V. Power dissipation is rated at 3.8 W (Ta) and 158 W (Tc). The NVMFS5830NLWFT3G is packaged in a 5x6 5-DFN (8-SOFL) surface mount configuration, supplied on tape and reel, and is AEC-Q101 qualified. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5880 pF @ 25 V |
| Qualification | AEC-Q101 |
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