NVMFS5830NLWFT1G
MOSFET N-CH 40V 29A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, NVMFS5830NLWFT1G, is designed for demanding automotive applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 29A at 25°C ambient. The low on-resistance of 2.3mOhm at 20A and 10V gate-source voltage, coupled with a maximum gate charge of 113 nC at 10V, ensures efficient switching performance.
The device offers a power dissipation of 3.8W (Ta) and 158W (Tc), operating across an extended temperature range of -55°C to 175°C (TJ). Packaged in an 8-PowerTDFN, 5-lead (5x6) 5-DFN (8-SOFL) footprint, it is supplied on tape and reel. Qualification to AEC-Q101 standards underscores its suitability for automotive environments. Key parameters include a threshold voltage of 2.4V at 250µA and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is rated at a maximum of 5880 pF at 25V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 158W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5880 pF @ 25 V |
| Qualification | AEC-Q101 |
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