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NVMFS5826NLWFT3G

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NVMFS5826NLWFT3G

MOSFET N-CH 60V 8A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5826NLWFT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 8A at 25°C (Ta), with a maximum power dissipation of 3.6W (Ta) and 39W (Tc). It is qualified to AEC-Q101 standards, ensuring reliability in automotive environments. The device offers a low on-resistance of 24mOhm at 10A and 10V, with a gate charge of 17nC at 10V. The NVMFS5826NLWFT3G is supplied in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key parameters include a threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-source voltage of ±20V. Its operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 25 V
QualificationAEC-Q101

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