NVMFS5826NLT3G
MOSFET N-CH 60V 8A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5826NLT3G is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 8A at 25°C (Ta), with a power dissipation of 3.6W (Ta) and 39W (Tc). It offers a low on-resistance of 24mOhm at 10A and 10V Vgs. The device is available in a compact 5-DFN (5x6) package, specified for surface mounting. Operating across a temperature range of -55°C to 175°C (TJ), this AEC-Q101 qualified MOSFET is suitable for demanding automotive and industrial environments. Key electrical characteristics include a gate charge of 17 nC at 10V Vgs and input capacitance of 850 pF at 25V Vds.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
| Qualification | AEC-Q101 |
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