NVMFS4C05NT3G
MOSFET N-CH 30V 24.7A/116A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS4C05NT3G is an N-Channel MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 24.7A at 25°C ambient temperature, escalating to 116A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 3.4mOhm at 30A and 10V gate-source voltage. Operating with gate drive voltages between 4.5V and 10V, it exhibits a maximum gate charge (Qg) of 30 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1972 pF at 15V. The NVMFS4C05NT3G is housed in a 5-DFN (5x6) package with 8-SOFL leads, suitable for surface mounting. Power dissipation is rated at 3.61W (Ta) and 79W (Tc). This MOSFET is AEC-Q101 qualified and operates within an extended temperature range of -55°C to 175°C. Its specifications make it suitable for use in automotive and industrial power switching applications requiring robust performance and thermal management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24.7A (Ta), 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.61W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
| Qualification | AEC-Q101 |
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