NVMFS4C05NT1G
MOSFET N-CH 30V 24.7A/116A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS4C05NT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current of 24.7 A at 25°C ambient temperature, scaling to 116 A under typical case temperature conditions. The low on-resistance of 3.4 mOhm at 30 A and 10 V gate drive makes it highly efficient for power switching. With a maximum power dissipation of 3.61 W (Ta) and 79 W (Tc), it is suitable for high-power designs. The NVMFS4C05NT1G utilizes advanced MOSFET technology and is packaged in an 8-PowerTDFN, 5-lead (5x6) 5-DFN (8-SOFL) for surface mounting. Key electrical parameters include a gate charge (Qg) of 30 nC at 10 V and input capacitance (Ciss) of 1972 pF at 15 V. Qualified to AEC-Q101 and designated as Automotive grade, this component is well-suited for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24.7A (Ta), 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.61W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
| Qualification | AEC-Q101 |
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