NVMFS4C03NT3G
MOSFET N-CH 30V 31.4A/143A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS4C03NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30 V drain-source voltage (Vdss) and offers a continuous drain current of 31.4 A at 25°C ambient temperature, scaling to 143 A under case temperature conditions. The device boasts a low on-resistance (Rds On) of 2.1 mOhm at 30 A and 10 V gate-source voltage. With a maximum power dissipation of 3.71 W (Ta) and 77 W (Tc), it is suitable for high-power switching. Key electrical parameters include a maximum gate charge (Qg) of 45.2 nC at 10 V and input capacitance (Ciss) of 3071 pF at 15 V Vds. The NVMFS4C03NT3G operates over an extended temperature range of -55°C to 175°C (TJ). Packaged in a 5-DFN (5x6) (8-SOFL) configuration, this AEC-Q101 qualified component is typically utilized in automotive power management systems and high-efficiency power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31.4A (Ta), 143A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.71W (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3071 pF @ 15 V |
| Qualification | AEC-Q101 |
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