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NVMFS4C03NT1G

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NVMFS4C03NT1G

MOSFET N-CH 30V 31.4A/143A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number NVMFS4C03NT1G, features a 30 V drain-source voltage (Vdss) and a continuous drain current of 31.4 A at 25°C ambient and 143 A at 25°C case temperature. This AEC-Q101 qualified device offers a low on-resistance (Rds(on)) of 2.1 mOhm maximum at 30 A and 10 Vgs. The MOSFET is designed for surface mounting in an 8-PowerTDFN, 5-lead package (5-DFN 5x6). Key electrical parameters include a gate charge (Qg) of 45.2 nC maximum at 10 Vgs and input capacitance (Ciss) of 3071 pF maximum at 15 Vds. Operating temperature ranges from -55°C to 175°C. This component is suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31.4A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs2.1mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.71W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3071 pF @ 15 V
QualificationAEC-Q101

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