NVMFS4C01NT3G
MOSFET N-CH 30V 49A/319A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS4C01NT3G is a 30V N-Channel Power MOSFET designed for high-performance applications. This component features a continuous drain current capability of 49A at 25°C ambient and 319A at 25°C case temperature, with a maximum power dissipation of 3.84W (ambient) and 161W (case). The Rds(On) is specified at a low 0.9mOhm at 30A and 10V Vgs.
This MOSFET utilizes a 5-DFN (5x6) package, also referred to as 8-PowerTDFN with 5 leads, suitable for surface mount configurations. Key electrical parameters include a Vgs(th) of 2.2V at 250µA, a maximum gate charge (Qg) of 139 nC at 10V, and input capacitance (Ciss) of 10144 pF at 15V. The device operates across an extended temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 standards, the NVMFS4C01NT3G is positioned for demanding automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 319A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.84W (Ta), 161W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10144 pF @ 15 V |
| Qualification | AEC-Q101 |
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