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NVMFS4C01NT1G

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NVMFS4C01NT1G

MOSFET N-CH 30V 49A/319A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number NVMFS4C01NT1G, is a 30V device designed for demanding applications. This AEC-Q101 qualified component features a low on-resistance of 0.9mOhm at 30A and 10V Vgs. With a continuous drain current capability of 49A at ambient temperature and 319A at case temperature, it offers robust performance. The device supports a gate drive range from 4.5V to 10V and exhibits an input capacitance of 10144pF at 15V Vds. The NVMFS4C01NT1G is housed in an 8-PowerTDFN, 5-lead package, suitable for surface-mount assembly, and operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs0.9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10144 pF @ 15 V
QualificationAEC-Q101

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