NVMFS4841NWFT1G
MOSFET N-CH 30V 16A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS4841NWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 16A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 7mOhm at 30A and 10V, with a specified gate drive voltage range of 4.5V to 10V. With a maximum gate charge (Qg) of 17nC at 4.5V, it ensures efficient switching performance. The NVMFS4841NWFT1G offers significant power dissipation capabilities, rated at 3.7W (Ta) and 112W (Tc). Packaged in an 8-PowerTDFN, 5 Leads (5x6) (8-SOFL) format, it is suitable for surface mount applications. This automotive-grade component adheres to AEC-Q101 qualification standards and operates across a wide temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 112W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1436 pF @ 12 V |
| Qualification | AEC-Q101 |
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