NVLUS4C12NTAG
MOSFET N-CH 30V 6.8A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVLUS4C12NTAG is an N-Channel MOSFET designed for automotive applications, meeting AEC-Q101 qualification. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 6.8A at 25°C (Ta). Optimized for efficient operation, it exhibits a low on-resistance of 9mOhm maximum at 9A, 10V. The device is housed in a compact 6-UDFN (2x2) exposed pad package, suitable for surface mounting. With a maximum power dissipation of 630mW (Ta) and a gate charge of 18 nC at 10V, the NVLUS4C12NTAG is engineered for demanding switching applications. It supports drive voltages from 3.3V to 10V and operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 630mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 15 V |
| Qualification | AEC-Q101 |
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