NVH4L200N170M1
SILICON CARBIDE (SIC) MOSFET ELManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVH4L200N170M1 is a Silicon Carbide (SiC) MOSFET designed for high-performance power applications. This discrete power semiconductor device leverages the inherent advantages of SiC technology, offering superior thermal performance, higher switching frequencies, and lower on-resistance compared to traditional silicon-based MOSFETs. The NVH4L200N170M1 is suitable for demanding applications in electric vehicles, industrial motor drives, and power factor correction circuits where efficiency and power density are critical. Its robust construction and advanced material properties ensure reliability in harsh operating environments.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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