NVF3055L108T3G
MOSFET N-CH 60V 3A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVF3055L108T3G is a N-Channel MOSFET designed for efficient power switching. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 3A at 25°C. With a maximum on-resistance of 120mOhm at 1.5A and 5V gate drive, it offers low conduction losses. The NVF3055L108T3G is housed in a SOT-223 (TO-261) surface mount package, enabling compact board layouts. Key parameters include a gate charge of 15 nC at 5V and input capacitance of 440 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this component is qualified to AEC-Q101 standards, making it suitable for automotive applications. The maximum power dissipation is rated at 1.3W (Ta).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
| Qualification | AEC-Q101 |