NVF2955PT1G
MOSFET P CH 60V 1.7A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVF2955PT1G is a P-Channel MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.7A at 25°C. The on-resistance (Rds On) is specified at a maximum of 185mOhm at 2.4A and 10V gate drive. With a maximum power dissipation of 1W (Ta) and an operating temperature range of -55°C to 175°C, it is suitable for rugged environments. The SOT-223 (TO-261) surface mount package facilitates efficient board assembly. Rated for AEC-Q101 automotive qualification, this MOSFET is commonly utilized in automotive electronics, power management, and general-purpose switching applications. Key parameters include a gate charge (Qg) of 14.3 nC and input capacitance (Ciss) of 492 pF, both specified at typical operating conditions. It supports a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SOT-223 (TO-261) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 25 V |
| Qualification | AEC-Q101 |