NVD6824NLT4G-VF01
MOSFET N-CH 100V 8.5A/41A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD6824NLT4G-VF01 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and offers continuous drain current capabilities of 8.5A at ambient temperature (Ta) and 41A at case temperature (Tc). With a maximum power dissipation of 3.9W (Ta) and 90W (Tc), it is suitable for high-power switching. The Rds(On) is specified at a maximum of 20mOhm at 20A and 10V Vgs. Key parameters include a gate charge (Qg) of 66 nC (max) at 10V Vgs and input capacitance (Ciss) of 3468 pF (max) at 25V Vds. Operating from a drive voltage range of 4.5V to 10V, this MOSFET is qualified to AEC-Q101 standards, making it ideal for automotive applications. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3468 pF @ 25 V |
| Qualification | AEC-Q101 |
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