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NVD6824NLT4G

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NVD6824NLT4G

MOSFET N-CH 100V 8.5A/41A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVD6824NLT4G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and offers a continuous drain current of 8.5A at ambient temperature and 41A at case temperature. With a maximum power dissipation of 3.9W (Ta) or 90W (Tc), this device is suitable for high-power switching. The Rds On is specified at a maximum of 20mOhm at 20A and 10V, with a gate drive voltage range of 4.5V to 10V. Key electrical characteristics include a gate charge (Qg) of 66 nC (max) at 10V and input capacitance (Ciss) of 3468 pF (max) at 25V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied in Tape & Reel. Designed for automotive applications, it meets AEC-Q101 qualification standards. The operating temperature range is -55°C to 175°C (TJ). This component is frequently utilized in automotive power management systems and other high-reliability electronic designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3468 pF @ 25 V
QualificationAEC-Q101

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