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NVD6820NLT4G-VF01

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NVD6820NLT4G-VF01

MOSFET N-CH 90V 10A/50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVD6820NLT4G-VF01 is an N-channel Power MOSFET designed for demanding automotive applications. This component features a drain-source voltage (Vdss) of 90V and offers continuous drain current capabilities of 10A at ambient temperature (Ta) and 50A at case temperature (Tc). With a maximum power dissipation of 4W (Ta) and 100W (Tc), it is suitable for high-power switching. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, and supplied on tape and reel. Key electrical characteristics include a maximum on-resistance (Rds On) of 16.7mOhm at 20A and 10V, a gate charge (Qg) of 83 nC at 10V, and input capacitance (Ciss) of 4209 pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ) and meets AEC-Q101 qualification standards. Drive voltages range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. This MOSFET is utilized in power management systems and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs16.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)90 V
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4209 pF @ 25 V
QualificationAEC-Q101

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