NVD6820NLT4G
MOSFET N-CH 90V 10A/50A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD6820NLT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 90 V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 10A at ambient temperature and 50A at case temperature, with a maximum power dissipation of 4W (Ta) and 100W (Tc). The device exhibits a low on-resistance (Rds On) of 16.7mOhm at 20A and 10V, achievable with gate drive voltages between 4.5V and 10V. With a gate charge (Qg) of 44 nC at 4.5 V and input capacitance (Ciss) of 4209 pF at 25 V, it is suitable for various switching applications. The NVD6820NLT4G is housed in a TO-252-3, DPAK package, facilitating surface mounting. Engineered for automotive environments, this component meets AEC-Q101 qualification standards and operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 90 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4209 pF @ 25 V |
| Qualification | AEC-Q101 |
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