NVD6495NLT4G-VF01
MOSFET N-CH 100V 25A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel Power MOSFET, part number NVD6495NLT4G-VF01, offers 100 V drain-source breakdown voltage and a continuous drain current of 25 A at 25°C (Tc). This device features a maximum on-resistance of 50 mOhm at 10 A and 10 V, and a gate charge (Qg) of 35 nC at 10 V. Designed for surface mounting in a TO-252-3, DPAK package, it dissipates up to 83 W at 25°C (Tc). The NVD6495NLT4G-VF01 operates across a temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive applications. Drive voltage specifications range from 4.5 V to 10 V with a maximum gate-source voltage of ±20 V. Input capacitance (Ciss) is 1024 pF at 25 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1024 pF @ 25 V |
| Qualification | AEC-Q101 |
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