NVD6495NLT4G
MOSFET N-CH 100V 25A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD6495NLT4G is a robust N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 25A at 25°C case temperature, with a maximum power dissipation of 83W (Tc). Optimized for efficiency, its Rds(On) is specified at a maximum of 50mOhm when sourcing 10A with a 10V Vgs. The gate charge (Qg) is rated at a maximum of 35 nC at 10V Vgs, and input capacitance (Ciss) is a maximum of 1024 pF at 25V Vds. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied in tape and reel. Qualified to AEC-Q101 and featuring an automotive grade, the NVD6495NLT4G is suitable for various automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1024 pF @ 25 V |
| Qualification | AEC-Q101 |
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