NVD6416ANT4G-VF01
MOSFET N-CH 100V 17A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVD6416ANT4G-VF01 is an N-Channel MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 17A at 25°C, this component offers a maximum on-resistance (Rds On) of 81mOhm at 17A and 10V gate drive. Its high power dissipation capability of 71W (Tc) and an operating temperature range of -55°C to 175°C make it suitable for automotive and industrial environments. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, facilitating surface mounting. Key electrical characteristics include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 620 pF at 25V. This component is qualified to AEC-Q101 standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
| Qualification | AEC-Q101 |
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