NVD6416ANLT4G-VF01
MOSFET N-CH 100V 19A DPAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel Power MOSFET, part number NVD6416ANLT4G-VF01, offers a 100V drain-source breakdown voltage and continuous drain current capability of 19A at 25°C (Tc). This device features a low on-resistance of 74mOhm maximum at 19A and 10V Vgs, with a gate charge of 40 nC maximum at 10V Vgs. Designed for efficient power switching applications, it supports a wide gate drive voltage range from 4.5V to 10V, with a maximum Vgs of ±20V. The MOSFET is housed in a DPAK-3 (TO-252-3) surface-mount package, facilitating integration into compact designs. With a power dissipation of 71W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this automotive-qualified component (AEC-Q101) is suitable for demanding automotive and industrial environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
| Qualification | AEC-Q101 |
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