NVD6416ANLT4G-001
MOSFET N-CH 100V 19A DPAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD6416ANLT4G-001 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 19A at 25°C. The device offers a low on-resistance (Rds On) of 74mOhm maximum at 10A and 10V Vgs, with a low gate charge of 40 nC maximum at 10V Vgs. It is housed in a DPAK-3 surface mount package (TO-252-3, DPAK) and supports a maximum power dissipation of 71W. Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive applications. Drive voltages range from 4.5V to 10V. The operating temperature range is -55°C to 175°C, with a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
| Qualification | AEC-Q101 |
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