NVD6415ANT4G-VF01
MOSFET N-CH 100V 23A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD6415ANT4G-VF01 is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 100V drain-source breakdown voltage and a continuous drain current rating of 23A at 25°C (Tc). With a low on-resistance of 55mOhm maximum at 23A and 10V gate drive, it minimizes conduction losses, enabling efficient power management. The MOSFET offers a maximum power dissipation of 83W (Tc) and a maximum junction temperature of 175°C, supported by its TO-252-3, DPAK (2 Leads + Tab), SC-63 package for effective thermal management. Key characteristics include a gate charge of 29nC at 10V and input capacitance of 700pF at 25V. This component is AEC-Q101 qualified, making it suitable for use in automotive systems such as power distribution, motor control, and battery management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| Qualification | AEC-Q101 |
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