NVD6415ANLT4G-VF01
MOSFET N-CH 100V 23A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD6415ANLT4G-VF01 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) capability of 23A at 25°C (Tc). With a maximum power dissipation of 83W (Tc), it utilizes a DPAK-3 surface mount package (TO-252-3, DPAK) suitable for efficient thermal management. Key specifications include a low Rds On of 52mOhm at 10A and 10V, and a gate charge (Qg) of 20nC at 4.5V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101 standards, making it suitable for automotive applications. It supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1024 pF @ 25 V |
| Qualification | AEC-Q101 |
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