NVD6415ANLT4G
MOSFET N-CH 100V 23A DPAK-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD6415ANLT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 23A at 25°C, with a maximum power dissipation of 83W (Tc). The NVD6415ANLT4G offers a low on-resistance (Rds On) of 52mOhm maximum at 10A and 10V, facilitated by a gate drive voltage range of 4.5V to 10V. Key parameters include a gate charge (Qg) of 20 nC maximum at 4.5V and an input capacitance (Ciss) of 1024 pF maximum at 25V. This MOSFET is housed in a DPAK (TO-252-3) surface mount package and operates across an extended temperature range of -55°C to 175°C (TJ). The NVD6415ANLT4G is AEC-Q101 qualified, making it suitable for the automotive industry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1024 pF @ 25 V |
| Qualification | AEC-Q101 |