NVD6414ANT4G-VF01
MOSFET N-CH 100V 32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel Power MOSFET, part number NVD6414ANT4G-VF01, offers a 100V drain-source breakdown voltage and a continuous drain current of 32A at 25°C (Tc). This device features a maximum Rds(on) of 37mOhm at 32A and 10V Vgs, with a typical gate charge of 40nC at 10V. The MOSFET is housed in a DPAK-3 surface mount package and supports a maximum junction temperature of 175°C. Its robust design, qualified to AEC-Q101, makes it suitable for demanding automotive applications. The input capacitance (Ciss) is rated at 1450pF at 25V. This component is engineered for efficient power switching and management in various automotive electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
| Qualification | AEC-Q101 |
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