NVD6414ANT4G
MOSFET N-CH 100V 34A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVD6414ANT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V, with a continuous drain current (Id) of 32A at 25°C and a maximum power dissipation of 100W (Tc). The Rds(On) is specified at a maximum of 37mOhm at 32A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 40 nC at 10V and Input Capacitance (Ciss) of 1450 pF at 25V. Engineered for reliability, this MOSFET operates within an ambient temperature range of -55°C to 175°C. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. This device is AEC-Q101 qualified and suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
