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NVD5C478NT4G

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NVD5C478NT4G

MOSFET N-CH 40V 14A/43A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVD5C478NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 40 V and offers continuous drain current capabilities of 14 A at ambient temperature and 43 A at case temperature. With a low on-resistance (Rds On) of 8.4 mOhm at 15 A and 10 V Vgs, it minimizes conduction losses. The MOSFET is rated for 3 W power dissipation at ambient and 30 W at case temperature, with a junction temperature range of -55°C to 175°C. The NVD5C478NT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. It is qualified to AEC-Q101 and carries an Automotive grade, making it suitable for automotive and industrial power management systems. Key parameters include a gate charge (Qg) of 14 nC at 10 V and input capacitance (Ciss) of 840 pF at 25 V. The device supports a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 30 µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs8.4mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id4V @ 30µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 25 V
QualificationAEC-Q101

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