NVD5890NT4G
MOSFET N-CH 40V 24A/123A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD5890NT4G is a N-Channel MOSFET designed for demanding automotive applications. This device features a 40V drain-source breakdown voltage and offers continuous drain current capabilities of 24A at ambient temperature and 123A at case temperature. With a low on-resistance of 3.7mOhm at 50A and 10V, it minimizes conduction losses. The NVD5890NT4G supports a gate drive voltage up to 10V for optimal Rds(on) performance, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge of 100 nC at 10V and an input capacitance of 4760 pF at 25V. The component is housed in a TO-252-3, DPAK package for surface mounting and operates across a wide temperature range of -55°C to 175°C. It is qualified to AEC-Q101 standards, signifying its suitability for automotive environments. The NVD5890NT4G is commonly utilized in power switching and motor control systems within the automotive industry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 123A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4760 pF @ 25 V |
| Qualification | AEC-Q101 |
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