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NVD5890NLT4G-VF01

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NVD5890NLT4G-VF01

NFET DPAK 40V 123A 3.7MOH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVD5890NLT4G-VF01 is an N-channel power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 40V and a low on-resistance (Rds On) of 3.7mOhm at 50A and 10V Vgs. It offers continuous drain current capabilities of 24A at ambient temperature and 123A at case temperature, with a maximum power dissipation of 4W (Ta) and 107W (Tc). The NVD5890NLT4G-VF01 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 84 nC at 10V Vgs and input capacitance (Ciss) of 4760 pF at 25V Vds. Qualified to AEC-Q101 and featuring automotive grade, this MOSFET is suitable for use in automotive systems, power management, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4760 pF @ 25 V
QualificationAEC-Q101

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