NVD5890NLT4G
MOSFET N-CH 40V 24A/123A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5890NLT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and offers a continuous drain current (Id) of 24A at 25°C ambient and 123A at 25°C case temperature. With a low on-resistance (Rds On) of 3.7mOhm maximum at 50A and 10V, it minimizes conduction losses. The MOSFET supports a gate drive voltage range from 4.5V to 10V, with a maximum gate charge (Qg) of 42 nC at 4.5V. Its surface mount DPAK (TO-252-3) package allows for efficient thermal management, achieving a maximum power dissipation of 4W (Ta) and 107W (Tc). Qualified to AEC-Q101 and rated for an operating temperature range of -55°C to 175°C, this component is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 123A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4760 pF @ 25 V |
| Qualification | AEC-Q101 |
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