NVD5865NLT4G
MOSFET N-CH 60V 10A/46A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD5865NLT4G is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 10A at ambient temperature and 46A when measured at the case. With a low on-resistance of 16mOhm at 19A and 10Vgs, it minimizes conduction losses. The MOSFET is housed in a TO-252-3, DPAK (SC-63) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 71W at case temperature. Key parameters include a gate charge of 29nC at 10V and input capacitance of 1400pF at 25V. Qualified to AEC-Q101 standards, the NVD5865NLT4G is suitable for power switching and control in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Qualification | AEC-Q101 |