NVD5863NLT4G
MOSFET N-CH 60V 14.9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVD5863NLT4G is an N-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 14.9A at 25°C ambient and 82A at 25°C case temperature. With a low on-resistance of 7.1mOhm at 41A and 10V gate-source voltage, it provides efficient power switching. The MOSFET supports a gate drive range from 4.5V to 10V, with a maximum gate-source voltage tolerance of ±20V. Its thermal performance is characterized by a maximum power dissipation of 3.1W (ambient) and 96W (case). The N-Channel device is packaged in a surface-mount DPAK (TO-252-3) and operates across an extended temperature range of -55°C to 175°C. This component is suitable for power management circuits within the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.9A (Ta), 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 41A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |
| Qualification | AEC-Q101 |
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