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NVD5863NLT4G

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NVD5863NLT4G

MOSFET N-CH 60V 14.9A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVD5863NLT4G is an N-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 14.9A at 25°C ambient and 82A at 25°C case temperature. With a low on-resistance of 7.1mOhm at 41A and 10V gate-source voltage, it provides efficient power switching. The MOSFET supports a gate drive range from 4.5V to 10V, with a maximum gate-source voltage tolerance of ±20V. Its thermal performance is characterized by a maximum power dissipation of 3.1W (ambient) and 96W (case). The N-Channel device is packaged in a surface-mount DPAK (TO-252-3) and operates across an extended temperature range of -55°C to 175°C. This component is suitable for power management circuits within the automotive sector.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs7.1mOhm @ 41A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3850 pF @ 25 V
QualificationAEC-Q101

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