NVD5862NT4G
MOSFET N-CH 60V 18A/98A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVD5862NT4G is an N-Channel Power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a 60V drain-to-source voltage (Vdss) and offers continuous drain current capabilities of 18A at ambient temperature and 98A at case temperature. With a low on-resistance of 5.7mOhm at 48A and 10V gate drive, it ensures efficient power transfer. The device is packaged in a surface-mount DPAK (TO-252-3) and supports a maximum continuous power dissipation of 4.1W (Ta) and 115W (Tc). Its operating temperature range is -55°C to 175°C. The NVD5862NT4G is suitable for automotive, industrial, and power management systems requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Qualification | AEC-Q101 |